P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

RS Stock No.:: 753-3166P
Mfr. Part No.:: SPB80P06PGATMA1
Brand:: Infineon

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

This image is representative of the product range

2865 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$6.50

(exc. GST)

$7.15

(inc. GST)

Units	Per unit
250 - 499	$6.50
500 +	$6.40

RS Stock No.:: 753-3166P
Mfr. Part No.:: SPB80P06PGATMA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	60 V
Series	SIPMOS®
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	340 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	115 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	9.45mm
Maximum Operating Temperature	+175 °C
Length	10.31mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

Infineon SIPMOS® P-Channel MOSFETs