BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon

  • RS Stock No. 753-2797
  • Mfr. Part No. BSO615NGHUMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon SIPMOS® Dual N-Channel MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 2.6 A
Maximum Drain Source Voltage 60 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 150 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 2 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Series SIPMOS
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 14 nC @ 10 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Discontinued product
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