N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK STMicroelectronics STD12NF06LT4

This image is representative of the product range

Discontinued product

Technical data sheets

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	60 V
Series	STripFET II
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	30 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Length	6.6mm
Width	6.2mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	7.5 nC @ 5 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	2.4mm
Minimum Operating Temperature	-55 °C