N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1

RS Stock No.:: 445-2269P
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1

This image is representative of the product range

10030 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$1.424

(exc. GST)

$1.566

(inc. GST)

Units	Per unit
250 - 495	$1.424
500 +	$1.406

RS Stock No.:: 445-2269P
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

BSP 295 SIPMOS ® Small-Signal Transistor Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.8 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	14 nC @ 10 V
Length	6.5mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.6mm

N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs