N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

RS Stock No.:: 354-5720P
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

This image is representative of the product range

3452 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$1.85

(exc. GST)

$2.03

(inc. GST)

Units	Per unit
250 - 499	$1.85
500 +	$1.82

RS Stock No.:: 354-5720P
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	660 mA
Maximum Drain Source Voltage	200 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.8 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	11 nC @ 5 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	3.5mm
Length	6.5mm
Transistor Material	Si
Height	1.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs