- RS Stock No.:
- 172-0479
- Mfr. Part No.:
- R6024ENJTL
- Brand:
- ROHM
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Pack of 5)
$5.752
(exc. GST)
$6.327
(inc. GST)
Units | Per unit | Per Pack* |
5 - 120 | $5.752 | $28.76 |
125 - 245 | $5.58 | $27.90 |
250 - 495 | $5.412 | $27.06 |
500 - 745 | $5.248 | $26.24 |
750 + | $5.092 | $25.46 |
*price indicative |
- RS Stock No.:
- 172-0479
- Mfr. Part No.:
- R6024ENJTL
- Brand:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 24 A |
Maximum Drain Source Voltage | 600 V |
Series | R6024ENJ |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 320 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 245 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Typical Gate Charge @ Vgs | 70 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Length | 10.4mm |
Number of Elements per Chip | 1 |
Width | 9.2mm |
Forward Diode Voltage | 1.5V |
Height | 4.7mm |
Minimum Operating Temperature | -55 °C |
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