P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK Toshiba TJ8S06M3L

RS Stock No.:: 171-2492
Mfr. Part No.:: TJ8S06M3L
Brand:: Toshiba

P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK Toshiba TJ8S06M3L

160 In Global stock for delivery within 5 working day(s)

170 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 10)

$2.018

(exc. GST)

$2.22

(inc. GST)

Units	Per unit	Per Pack*
10 - 490	$2.018	$20.18
500 - 990	$1.984	$19.84
1000 +	$1.948	$19.48
*price indicative

RS Stock No.:: 171-2492
Mfr. Part No.:: TJ8S06M3L
Brand:: Toshiba

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: JP

Product Details

Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -60V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	27 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +10 V
Typical Gate Charge @ Vgs	19 nC @ 10 V
Length	6.5mm
Number of Elements per Chip	1
Width	7mm
Maximum Operating Temperature	+175 °C
Height	2.3mm
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V

P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK Toshiba TJ8S06M3L

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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