TJ8S06M3L P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK Toshiba

  • RS Stock No. 171-2492
  • Mfr. Part No. TJ8S06M3L
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
COO (Country of Origin): JP
Product Details

Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -60V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 8 A
Maximum Drain Source Voltage 60 V
Package Type DPAK
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 130 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 27 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +10 V
Number of Elements per Chip 1
Length 6.5mm
Width 7mm
Forward Diode Voltage 1.2V
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 19 nC @ 10 V
Maximum Operating Temperature +175 °C
Height 2.3mm
70 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$ 1.58
(exc. GST)
$ 1.74
(inc. GST)
units
Per unit
Per Pack*
10 - 40
$1.58
$15.80
50 - 90
$1.353
$13.53
100 - 990
$1.185
$11.85
1000 +
$1.052
$10.52
*price indicative
Packaging Options:
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