N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 Toshiba TK4R3E06PL
- RS Stock No.:
- 171-2469
- Mfr. Part No.:
- TK4R3E06PL
- Brand:
- Toshiba
Discontinued product
- RS Stock No.:
- 171-2469
- Mfr. Part No.:
- TK4R3E06PL
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 15.1 nC (typ.)
Small output charge: Qoss = 39 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 15.1 nC (typ.)
Small output charge: Qoss = 39 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 87 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 15.1mm |
| Typical Gate Charge @ Vgs | 48.2 nC @ 10 V |
| Length | 10.16mm |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | 1.5V |
| Height | 4.45mm |