Dual N-Channel MOSFET, 8 A, 60 V, 8-Pin SOIC Infineon IRF7351TRPBF
- RS Stock No.:
- 168-8970
- Mfr. Part No.:
- IRF7351TRPBF
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 168-8970
- Mfr. Part No.:
- IRF7351TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TH
Product Details
Dual N-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 17.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Transistor Material | Si |
| Width | 4mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Height | 1.5mm |
| Series | HEXFET |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |