N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2
- RS Stock No.:
- 168-4794
- Mfr. Part No.:
- MMIX1T550N055T2
- Brand:
- IXYS
On back order for despatch 19/11/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 20)
$64.224
(exc. GST)
$70.646
(inc. GST)
| Units | Per unit | Per Tube* |
| 20 - 20 | $64.224 | $1,284.48 |
| 40 - 60 | $62.618 | $1,252.36 |
| 80 + | $61.655 | $1,233.10 |
| *price indicative | ||
- RS Stock No.:
- 168-4794
- Mfr. Part No.:
- MMIX1T550N055T2
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 550 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 25.25mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 23.25mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 5.7mm |