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N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV301N

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291000 In stock for delivery within 7 working day(s)
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Price (ex. GST) Each (On a Reel of 3000)

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$0.05

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RS Stock No.:
166-1935
Mfr. Part No.:
FDV301N
Manufacturer:
ON Semiconductor
unitsPer unitPer Reel*
3000 +$0.05$150.00
*price indicative

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

AttributeValue
Channel TypeN
Maximum Continuous Drain Current500 mA
Maximum Drain Source Voltage25 V
Package TypeSOT-23
Mounting TypeSurface Mount
Pin Count3
Maximum Drain Source Resistance9 Ω
Channel ModeEnhancement
Maximum Gate Threshold Voltage1.06V
Minimum Gate Threshold Voltage0.7V
Maximum Power Dissipation350 mW
Transistor ConfigurationSingle
Maximum Gate Source Voltage+8 V
Number of Elements per Chip1
Forward Diode Voltage1.2V
Height0.93mm
Width1.3mm
Minimum Operating Temperature-55 °C
Length2.92mm
Typical Gate Charge @ Vgs0.49 nC @ 4.5 V
Maximum Operating Temperature+150 °C
Transistor MaterialSi