N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV301N
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|units||Per unit||Per Reel*|
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
|Maximum Continuous Drain Current||500 mA|
|Maximum Drain Source Voltage||25 V|
|Mounting Type||Surface Mount|
|Maximum Drain Source Resistance||9 Ω|
|Maximum Gate Threshold Voltage||1.06V|
|Minimum Gate Threshold Voltage||0.7V|
|Maximum Power Dissipation||350 mW|
|Maximum Gate Source Voltage||+8 V|
|Number of Elements per Chip||1|
|Forward Diode Voltage||1.2V|
|Minimum Operating Temperature||-55 °C|
|Typical Gate Charge @ Vgs||0.49 nC @ 4.5 V|
|Maximum Operating Temperature||+150 °C|