Dual N/P-Channel-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSOP-6 Infineon BSL215CH6327XTSA1

RS Stock No.:: 166-1086
Mfr. Part No.:: BSL215CH6327XTSA1
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSOP-6 Infineon BSL215CH6327XTSA1

This image is representative of the product range

63000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.313

(exc. GST)

$0.344

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.313	$939.00
15000 +	$0.282	$846.00
*price indicative

RS Stock No.:: 166-1086
Mfr. Part No.:: BSL215CH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™ Dual Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.5 A
Maximum Drain Source Voltage	20 V
Series	OptiMOS
Package Type	TSOP-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	250 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.6 V, 1.2V
Minimum Gate Threshold Voltage	0.7 V, 1.2V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Width	1.6mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	0.73 nC @ 4.5 V, 3 nC @ 5 V
Length	2.9mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.1V
Height	1mm
Minimum Operating Temperature	-55 °C