Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1

RS Stock No.:: 166-0823
Mfr. Part No.:: IPG20N06S4L26ATMA1
Brand:: Infineon

Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1

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Discontinued product

RS Stock No.:: 166-0823
Mfr. Part No.:: IPG20N06S4L26ATMA1
Brand:: Infineon

IPG20N06S4L-26 Dual OptiMOS-T2 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	60 V
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	46 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	33 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	2
Width	5.9mm
Typical Gate Charge @ Vgs	15 nC @ 10 V
Length	5.15mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Series	OptiMOS
Height	0.75mm
Forward Diode Voltage	1.3V

Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1

Infineon OptiMOS™ Dual Power MOSFET