IRFI4019H-117P Dual N-Channel MOSFET, 8.7 A, 150 V HEXFET, 5-Pin TO-220 Infineon

  • RS Stock No. 165-7619
  • Mfr. Part No. IRFI4019H-117P
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 8.7 A
Maximum Drain Source Voltage 150 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 5
Maximum Drain Source Resistance 95 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.9V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 18 W
Transistor Configuration Series
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Width 4.83mm
Minimum Operating Temperature -40 °C
Transistor Material Si
Length 10.67mm
Height 9.02mm
Series HEXFET
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 13 nC @ 10 V
250 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 2.667
(exc. GST)
$ 2.934
(inc. GST)
units
Per unit
Per Tube*
50 +
$2.667
$133.35
*price indicative
Related Products
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, ...
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion ...
Specifically designed for Automotive applications, this HEXFET® Power ...
Description:
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche ...
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, ...