- RS Stock No.:
- 153-0777
- Mfr. Part No.:
- PMXB65ENEZ
- Brand:
- Nexperia
Discontinued product
- RS Stock No.:
- 153-0777
- Mfr. Part No.:
- PMXB65ENEZ
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 44 mΩ
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 44 mΩ
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.2 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DFN1010D-3, SOT1215 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 107 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 8.33 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Length | 1.15mm |
Number of Elements per Chip | 3 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 6 nC @ 10 V |
Width | 1.05mm |
Height | 0.36mm |
Minimum Operating Temperature | -55 °C |