N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 Nexperia PMV280ENEAR
- RS Stock No.:
- 153-0676
- Mfr. Part No.:
- PMV280ENEAR
- Brand:
- Nexperia
350 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 25)
$0.468
(exc. GST)
$0.515
(inc. GST)
| Units | Per unit | Per Pack* |
| 25 - 725 | $0.468 | $11.70 |
| 750 - 1475 | $0.457 | $11.425 |
| 1500 + | $0.45 | $11.25 |
| *price indicative | ||
- RS Stock No.:
- 153-0676
- Mfr. Part No.:
- PMV280ENEAR
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.
100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 892 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.7V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
| Automotive Standard | AEC-Q101 |
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