Services
Ideas & Advice
Special Offers & Clearance
Parcel Tracking
Login / Sign up
Menu
MPN
Recently searched
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
/
Semiconductors
/
Discrete Semiconductors
/
MOSFETs
N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXYS IXFQ34N50P3
RS Stock No.:
146-1753
Mfr. Part No.:
IXFQ34N50P3
Brand:
IXYS
This image is representative of the product range
View all MOSFETs
Discontinued product
RS Stock No.:
146-1753
Mfr. Part No.:
IXFQ34N50P3
Brand:
IXYS
Technical data sheets
Legislation and Compliance
Product Details
Specifications
IXFQ34N50P3, IXFH34N50P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
COO (Country of Origin):
US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
500 V
Package Type
TO-3PN
Series
HiperFET, Polar3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
695 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Length
15.8mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.9mm
Height
20.3mm
Minimum Operating Temperature
-55 °C