N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 Infineon IPN50R1K4CEATMA1

RS Stock No.:: 130-0911P
Mfr. Part No.:: IPN50R1K4CEATMA1
Brand:: Infineon

N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 Infineon IPN50R1K4CEATMA1

This image is representative of the product range

3000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$0.782

(exc. GST)

$0.86

(inc. GST)

Units	Per unit
750 - 1475	$0.782
1500 +	$0.77

RS Stock No.:: 130-0911P
Mfr. Part No.:: IPN50R1K4CEATMA1
Brand:: Infineon

IPN50R1K4CE, MOSFET 500V CoolMOS CE Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.8 A
Maximum Drain Source Voltage	550 V
Series	CoolMOS™ CE
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	5 W
Maximum Gate Source Voltage	-30 V, +30 V
Width	3.7mm
Length	6.7mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.2 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-40 °C
Forward Diode Voltage	0.83V
Height	1.7mm

N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 Infineon IPN50R1K4CEATMA1

Infineon CoolMOS™ CE Power MOSFET