N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK STMicroelectronics STB33N60DM2

RS Stock No.:: 111-6461
Mfr. Part No.:: STB33N60DM2
Brand:: STMicroelectronics

N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK STMicroelectronics STB33N60DM2

This image is representative of the product range

View all MOSFETs

Discontinued product

RS Stock No.:: 111-6461
Mfr. Part No.:: STB33N60DM2
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	650 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	190 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Width	9.35mm
Length	10.4mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	47 nC @ 10 V
Height	4.6mm
Series	MDmesh DM2
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V