RS Components
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Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

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20 In stock for delivery within 5 working day(s)
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RS Stock No.:
Mfr. Part No.:
COO (Country of Origin):
unitsPer unit
1 - 19$6.08
20 - 49$5.76
50 - 99$5.41
100 - 249$5.16
250 +$4.94

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Maximum Continuous Collector Current50 A
Maximum Collector Emitter Voltage900 V
Maximum Gate Emitter Voltage±25V
Maximum Power Dissipation230 W
Package TypeTO-3P
Mounting TypeThrough Hole
Channel TypeN
Pin Count3
Switching Speed0.4µs
Transistor ConfigurationSingle
Dimensions15.5 x 4.5 x 20mm
Maximum Operating Temperature+175 °C
Gate Capacitance1500pF