Infineon IRG4IBC30WPBF IGBT, 17 A 600 V, 3-Pin TO-220FP

  • RS Stock No. 864-0930
  • Mfr. Part No. IRG4IBC30WPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Attribute Value
Maximum Continuous Collector Current 17 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 45 W
Package Type TO-220FP
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 30 → 150kHz
Transistor Configuration Single
Length 10.63mm
Width 4.83mm
Height 16.12mm
Dimensions 10.63 x 4.83 x 16.12mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Discontinued product