Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

RS Stock No.:: 796-5055
Mfr. Part No.:: GT20J341
Brand:: Toshiba

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

This image is representative of the product range

36 In Global stock for delivery within 5 working day(s)

166 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$3.86

(exc. GST)

$4.25

(inc. GST)

Units	Per unit
1 - 12	$3.86
13 - 24	$3.77
25 +	$3.73

RS Stock No.:: 796-5055
Mfr. Part No.:: GT20J341
Brand:: Toshiba

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, Toshiba

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	20 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	45 W
Package Type	TO-220SIS
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	100kHz
Transistor Configuration	Single
Dimensions	10 x 4.5 x 15mm
Maximum Operating Temperature	+150 °C