Toshiba GT50J322(Q) IGBT, 50 A 600 V, 3-Pin TO-3PLH

  • RS Stock No. 756-0552
  • Mfr. Part No. GT50J322(Q)
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 130 W
Package Type TO-3PLH
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.25µs
Transistor Configuration Single
Length 26mm
Width 20.5mm
Height 5.2mm
Dimensions 26 x 20.5 x 5.2mm
Maximum Operating Temperature +150 °C
In stock for delivery next working day
Price (ex. GST) Each
$ 10.86
(exc. GST)
$ 11.95
(inc. GST)
units
Per unit
1 - 24
$10.86
25 - 99
$9.38
100 - 249
$8.66
250 - 499
$8.37
500 +
$8.13
Packaging Options:
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