DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

Datasheet DGTD120T40S1PT

COO (Country of Origin):: CN

The DGTD120T40S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high switching performance.

High-Speed Switching & Low Power Loss
VCE(sat) = 2.0V @ IC = 40A
High Input Impedance
rr = 100ns (typ) @ diF/dt = 200A/us
Ultra Soft, Fast Recovery Anti-parallel Diode
Ultra Narrowed VF Distribution Control
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Drive
UPS
Solar Inverter
IH Cooker

Attribute	Value
Maximum Continuous Collector Current	80 A, 160 (Pulsed) A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	357 W
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Dimensions	16.26 x 5.31 x 21.46mm
Minimum Operating Temperature	-55 °C
Gate Capacitance	6030pF
Maximum Operating Temperature	+150 °C