Infineon IRGIB15B60KD1P IGBT, 19 A 600 V, 3-Pin TO-220

  • RS Stock No. 165-5794
  • Mfr. Part No. IRGIB15B60KD1P
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Specifications
Attribute Value
Maximum Continuous Collector Current 19 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 52 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.63mm
Width 4.83mm
Height 16.12mm
Dimensions 10.63 x 4.83 x 16.12mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
200 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 50)
$ 5.70
(exc. GST)
$ 6.27
(inc. GST)
units
Per unit
Per Tube*
50 +
$5.70
$285.00
*price indicative
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