ON Semiconductor NGTB15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 117 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.28mm
Width 4.82mm
Height 15.75mm
Dimensions 10.28 x 4.82 x 15.75mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
600 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 50)
$ 2.00
(exc. GST)
$ 2.20
(inc. GST)
units
Per unit
Per Tube*
50 +
$2.00
$100.00
*price indicative
Related Products
Using the novel field stop 4th generation IGBT ...
Description:
Using the novel field stop 4th generation IGBT technology AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications. VCE(sat) = 1.6 V (typ.) @ IC = 40 ALow ...
Main upgrades comparing to FGH40T65SPD-F085, Lead length is ...
Description:
Main upgrades comparing to FGH40T65SPD-F085, Lead length is increased to 20mm that is better for system assembly work 3x rated current dynamic screening test is applied in Final Test so that 100% of parts have present immunity to latch-up during ...
Using novel field stop IGBT technology, ON semiconductor’s ...
Description:
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications Maximum junction temperature : TJ = 175°CPositive temperaure co-efficient ...
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...