Renesas Electronics RJH60F5DPQ-A0#T0 IGBT, 80 A 600 V, 3-Pin TO-247A

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 260.4 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Dimensions 15.94 x 5.02 x 21.13mm
Gate Capacitance 2780pF
Maximum Operating Temperature +150 °C
Discontinued product