IXYS MUBW15-12A6K, 3 Phase Bridge IGBT Module, 19 A max, 1200 V, PCB Mount

  • RS Stock No. 194-596
  • Mfr. Part No. MUBW15-12A6K
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 19 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Pin Count 25
Dimensions 82 x 37.4 x 17.1mm
Height 17.1mm
Length 82mm
Maximum Operating Temperature +125 °C
Minimum Operating Temperature -40 °C
Width 37.4mm
On back order for despatch 04/02/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each
$ 57.87
(exc. GST)
$ 63.66
(inc. GST)
units
Per unit
1 - 9
$57.87
10 - 49
$57.82
50 - 99
$57.38
100 - 249
$51.61
250 +
$51.57
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The Insulated Gate Bipolar Transistor or IGBT is ...
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