Cypress Semiconductor FM24CL64B-DG Serial-I2C FRAM Memory, 64kbit, 2.7 → 3.65 V 8-Pin DFN

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 64kbit
Organisation 8K x 8 bit
Interface Type Serial-I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type DFN
Pin Count 8
Dimensions 4 x 4.5 x 0.7mm
Length 4mm
Maximum Operating Supply Voltage 3.65 V
Width 4.5mm
Height 0.7mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Number of Words 8K
Number of Bits per Word 8bit
152 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 2)
$ 6.53
(exc. GST)
$ 7.18
(inc. GST)
units
Per unit
Per Pack*
2 - 8
$6.53
$13.06
10 - 18
$5.66
$11.32
20 - 98
$5.305
$10.61
100 - 498
$4.95
$9.90
500 +
$4.715
$9.43
*price indicative
Packaging Options:
Related Products
FLASH Memory IC is a non-volatile RAM that ...
Description:
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed. High ...
FLASH Memory IC is a non-volatile RAM that ...
Description:
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed. High ...
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...