Cypress Semiconductor FM16W08-SG Parallel FRAM Memory, 64kbit, 70ns, 2.7 → 5.5 V 28-Pin SOIC

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K ´ 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 64kbit
Organisation 8K x 8 bit
Interface Type Parallel
Data Bus Width 8bit
Maximum Random Access Time 70ns
Mounting Type Surface Mount
Package Type SOIC
Pin Count 28
Dimensions 18.11 x 7.62 x 2.37mm
Length 18.11mm
Maximum Operating Supply Voltage 5.5 V
Width 7.62mm
Height 2.37mm
Maximum Operating Temperature +85 °C
Number of Words 8K
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
334 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 17.25
(exc. GST)
$ 18.97
(inc. GST)
units
Per unit
1 - 9
$17.25
10 - 24
$15.42
25 - 99
$15.01
100 - 499
$13.20
500 +
$12.43
Packaging Options:
Related Products
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...