onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204
- RS Stock No.:
- 463-000P
- Mfr. Part No.:
- MJ11016G
- Brand:
- onsemi
386 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (Supplied in a Tray)
$13.31
(exc. GST)
$14.64
(inc. GST)
Units | Per unit |
---|---|
26 - 128 | $13.31 |
130 + | $12.65 |
- RS Stock No.:
- 463-000P
- Mfr. Part No.:
- MJ11016G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 120 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-204 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain | 200 |
Maximum Base Emitter Saturation Voltage | 5 V |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | 4 V |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +200 °C |
Width | 26.67mm |
Dimensions | 39.37 x 26.67 x 8.51mm |
Height | 8.51mm |
Length | 39.37mm |