Dual N-Channel MOSFET, 2.6 A, 60 V, 8-Pin SOIC Infineon BSO615NGHUMA1
- RS Stock No.:
- 753-2797
- Mfr. Part No.:
- BSO615NGHUMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 753-2797
- Mfr. Part No.:
- BSO615NGHUMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® Dual N-Channel MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | SIPMOS |