N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon IRLL2705TRPBF

RS Stock No.:: 830-3304
Mfr. Part No.:: IRLL2705TRPBF
Brand:: Infineon

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon IRLL2705TRPBF

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Subtotal (1 pack of 20 units)**

$21.10

(exc. GST)

$23.22

(inc. GST)

200 In Global stock for delivery within 10 working day(s)*

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Units	Per unit	Per Pack**
20 - 620	$1.055	$21.10
640 - 1240	$1.036	$20.72
1260 +	$1.017	$20.34

**price indicative

RS Stock No.:: 830-3304
Mfr. Part No.:: IRLL2705TRPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF

This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.

Features & Benefits

• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs

Applications

• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems

What is the maximum voltage this component can handle?

The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.

Can it operate at high temperatures?

Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.

How does this component manage heat during operation?

With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.

Is it compatible with standard PCB designs?

This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.

What makes this a suitable choice for automation projects?

Its rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Package Type	SOT-223
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	3.7mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	32 nC @ 10 V
Length	6.7mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.739mm
Forward Diode Voltage	1.3V