- RS Stock No.:
- 188-5324
- Mfr. Part No.:
- CY62148ELL-55SXI
- Brand:
- Infineon
On back order for despatch 02/05/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 25)
$11.66
(exc. GST)
$12.83
(inc. GST)
Units | Per unit | Per Tube* |
25 - 25 | $11.66 | $291.50 |
50 - 75 | $11.497 | $287.425 |
100 + | $11.268 | $281.70 |
*price indicative |
- RS Stock No.:
- 188-5324
- Mfr. Part No.:
- CY62148ELL-55SXI
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
SRAM (Static Random Access Memory)
Specifications
Attribute | Value |
---|---|
Memory Size | 4Mbit |
Organisation | 512k x 8 bit |
Number of Words | 512k |
Number of Bits per Word | 8bit |
Maximum Random Access Time | 55ns |
Address Bus Width | 8bit |
Clock Frequency | 1MHz |
Low Power | Yes |
Timing Type | Asynchronous |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 32 |
Dimensions | 20.75 x 11.43 x 2.88mm |
Height | 2.88mm |
Maximum Operating Supply Voltage | 5.5 V |
Maximum Operating Temperature | +85 °C |
Length | 20.75mm |
Minimum Operating Temperature | -40 °C |
Width | 11.43mm |
Minimum Operating Supply Voltage | 4.5 V |
Related links
- Infineon SRAM Memory Chip, CY7C1041G30-10ZSXE- 4Mbit
- Infineon SRAM Memory Chip, CY62148ELL-55SXIT- 4Mbit
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- Infineon SRAM, CY7C1041G-10ZSXI- 4Mbit
- Microchip SRAM Memory Chip, 48L640-I/SN- 64kbit
- Renesas Electronics SRAM, RMLV0416EGSB-4S2#AA1- 4Mbit
- Alliance Memory SRAM, AS6C4008-55PIN- 4Mbit
- Infineon SRAM, CY62167EV30LL-45ZXA- 16Mbit