IPU80R2K8CEBKMA1 N-Channel MOSFET, 1.9 A, 800 V CoolMOS CE, 3-Pin IPAK Infineon

  • RS Stock No. 857-7104
  • Mfr. Part No. IPU80R2K8CEBKMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.9 A
Maximum Drain Source Voltage 800 V
Maximum Drain Source Resistance 2.8 Ω
Maximum Gate Threshold Voltage 3.9V
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -30 V, +30 V
Package Type TO-251
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 42 W
Height 6.22mm
Number of Elements per Chip 1
Width 2.41mm
Series CoolMOS CE
Typical Turn-Off Delay Time 72 ns
Length 6.73mm
Dimensions 6.73 x 2.41 x 6.22mm
Transistor Material Si
Typical Turn-On Delay Time 25 ns
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 12 nC @ 10 V
Typical Input Capacitance @ Vds 290 pF @ 100 V
Maximum Operating Temperature +150 °C
Discontinued product