onsemi FGB40T65SPD_F085 IGBT, 40 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 135-8687
- Mfr. Part No.:
- FGB40T65SPD_F085
- Brand:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 135-8687
- Mfr. Part No.:
- FGB40T65SPD_F085
- Brand:
- ON Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Features
• Positive temperaure co-efficient for easy parallel operation
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution
RS Product Codes
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Note
Quoted current ratings apply when junction temperature Tc = +100°C.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 267 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 2+Tab |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Automotive Standard | AEC-Q101 |
| Gate Capacitance | 1520pF |