OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or chopped light.To achieve high speeds, these detectors should be reverse biased. Typical response times from 10 ns to 250 ns can be achieved with a 10V reverse bias, for example. When a reverse bias is applied, capacitance decreases (as seen in the figure below) corresponding directly to an increase in speed. As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.Since a reverse bias generates additional dark current, the noise in the device will also increase with applied bias. For lower noise detectors, the Photovoltaic Series should be considered.

High Speed Response
Low Capacitance
Low Dark Current
Wide Dynamic Range
High Responsivity
APPLICATIONS
Pulse Detectors
Optical Communications
Bar Code Readers
Optical Remote Control
Medical Equipment
High Speed Photometry

Specifications
Attribute Value
Spectrums Detected Infrared
Wavelength of Peak Sensitivity 900nm
Package Type TO-8
Mounting Type Through Hole
Number of Pins 3
Diode Material Si
Minimum Wavelength Detected 350nm
Maximum Wavelength Detected 1100nm
Height 0.17in
Diameter 13.97mm
Series OSD
Polarity Reverse
Typical Rise Time 14ns
Peak Photo Sensitivity 0.54A/W
On back order for despatch 09/10/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Tray of 10)
$ 108.542
(exc. GST)
$ 119.396
(inc. GST)
units
Per unit
Per Tray*
10 +
$108.542
$1,085.42
*price indicative