OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

OSI UV Enhanced Series Photodiodes

The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.

Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response

Photodiodes, OSI Optoelectronics

Specifications
Attribute Value
Spectrums Detected Ultraviolet
Wavelength of Peak Sensitivity 980nm
Package Type Ceramic
Mounting Type Through Hole
Number of Pins 2
Diode Material Si
Minimum Wavelength Detected 190nm
Maximum Wavelength Detected 1100nm
Length 16.51mm
Width 14.99mm
Height 2.03mm
Polarity Reverse
Peak Photo Sensitivity 0.5A/W
16 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Box of 2)
$ 286.16
(exc. GST)
$ 314.78
(inc. GST)
units
Per unit
Per Box*
2 +
$286.16
$572.32
*price indicative
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