OSI Optoelectronics, PIN-RD100 Visible Light Si Photodiode, Through Hole Ceramic

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): US
Product Details

These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions.

Product Applications
Laser Applications
Control Systems
Electron Detection
High Energy Physics
Medical Instrumentation
Product Features
Large Active Area
Fully Depleteable
Fast Response
Ultra Low Dark Current

Specifications
Attribute Value
Spectrums Detected Visible Light
Wavelength of Peak Sensitivity 950nm
Package Type Ceramic
Mounting Type Through Hole
Number of Pins 2
Diode Material Si
Minimum Wavelength Detected 350nm
Maximum Wavelength Detected 1100nm
Length 16.51mm
Width 14.986mm
Height 2.032mm
Peak Photo Sensitivity 0.6A/W
Series PIN
Shunt Resistance
Typical Rise Time 40ns
1 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each
$ 195.54
(exc. GST)
$ 215.09
(inc. GST)
units
Per unit
1 - 4
$195.54
5 - 9
$188.47
10 - 24
$179.05
25 +
$168.72
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