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N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB Infineon IRLZ34NPBF

1750 In stock for delivery within 7 working day(s)
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Price (ex. GST) Each (In a Tube of 50)


(exc. GST)


(inc. GST)



RS Stock No.:
Mfr. Part No.:
COO (Country of Origin):
unitsPer unitPer Tube*
50 - 50$1.188$59.40
100 - 150$1.126$56.30
200 - 450$1.092$54.60
500 - 950$1.054$52.70
1000 +$1.031$51.55
*price indicative

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Channel TypeN
Maximum Continuous Drain Current30 A
Maximum Drain Source Voltage55 V
Package TypeTO-220AB
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance35 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage2V
Minimum Gate Threshold Voltage1V
Maximum Power Dissipation68 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-16 V, +16 V
Number of Elements per Chip1
Typical Gate Charge @ Vgs25 nC @ 5 V
Maximum Operating Temperature+175 °C
Minimum Operating Temperature-55 °C
Transistor MaterialSi