N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
200 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 100)
$1.397
(exc. GST)
$1.537
(inc. GST)
| Units | Per unit | Per Tube* |
| 100 - 100 | $1.397 | $139.70 |
| 200 - 300 | $1.392 | $139.20 |
| 400 + | $1.37 | $137.00 |
| *price indicative | ||
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• TrenchFET® power MOSFET
• Package with low thermal resistance
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 540 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Width | 6.29mm |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V |
| Length | 5mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 3.37mm |
| Minimum Operating Temperature | -55 °C |
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