P-Channel MOSFET, 5.8 A, 30 V, 8-Pin SOIC Infineon IRF7406TRPBF

RS Stock No.:: 915-4951
Mfr. Part No.:: IRF7406TRPBF
Brand:: Infineon

P-Channel MOSFET, 5.8 A, 30 V, 8-Pin SOIC Infineon IRF7406TRPBF

This image is representative of the product range

140 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 20)

$1.358

(exc. GST)

$1.494

(inc. GST)

Units	Per unit	Per Pack*
20 - 980	$1.358	$27.16
1000 - 1980	$1.325	$26.50
2000 +	$1.304	$26.08
*price indicative

RS Stock No.:: 915-4951
Mfr. Part No.:: IRF7406TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	59 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	5mm
Transistor Material	Si
Width	4mm
Forward Diode Voltage	1V
Height	1.5mm
Minimum Operating Temperature	-55 °C