N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1
- RS Stock No.:
- 911-4808
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
1000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (On a Reel of 1000)
$0.889
(exc. GST)
$0.978
(inc. GST)
| Units | Per unit | Per Reel* |
| 1000 - 4000 | $0.889 | $889.00 |
| 5000 + | $0.801 | $801.00 |
| *price indicative | ||
- RS Stock No.:
- 911-4808
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Infineon SIPMOS® N-Channel MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 660 mA |
| Maximum Drain Source Voltage | 200 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.8 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 6.5mm |
| Width | 3.5mm |
| Typical Gate Charge @ Vgs | 11 nC @ 5 V |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |