P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

RS Stock No.:: 907-5151
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

This image is representative of the product range

On back order for despatch 01/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 50)

$0.679

(exc. GST)

$0.747

(inc. GST)

Units	Per unit	Per Pack*
50 - 700	$0.679	$33.95
750 - 1450	$0.662	$33.10
1500 +	$0.652	$32.60
*price indicative

RS Stock No.:: 907-5151
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	66 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	1.75mm
Typical Gate Charge @ Vgs	12 nC @ 10 V
Number of Elements per Chip	1
Length	3mm
Transistor Material	Si
Forward Diode Voltage	1.2V
Height	1.3mm
Minimum Operating Temperature	-55 °C