IRFTS9342TRPBF P-Channel MOSFET, 5.8 A, 30 V HEXFET, 6-Pin TSOP Infineon

  • RS Stock No. 907-5151
  • Mfr. Part No. IRFTS9342TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 5.8 A
Maximum Drain Source Voltage 30 V
Package Type TSOP
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 66 mΩ
Channel Mode Enhancement
Maximum Power Dissipation 2 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 12 nC @ 10 V
Series HEXFET
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.2V
Width 1.75mm
Height 1.3mm
Length 3mm
Transistor Material Si
On back order for despatch 16/07/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Pack of 50)
$ 0.572
(exc. GST)
$ 0.629
(inc. GST)
units
Per unit
Per Pack*
50 - 450
$0.572
$28.60
500 - 2450
$0.522
$26.10
2500 - 4950
$0.465
$23.25
5000 - 12450
$0.443
$22.15
12500 +
$0.433
$21.65
*price indicative
Packaging Options:
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Description:
P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge Across the range benchmark on ...