N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

RS Stock No.:: 907-4741
Mfr. Part No.:: SCT30N120
Brand:: STMicroelectronics

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

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1 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$38.90

(exc. GST)

$42.79

(inc. GST)

Units	Per unit
1 +	$38.90

RS Stock No.:: 907-4741
Mfr. Part No.:: SCT30N120
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Package Type	HiP247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Maximum Operating Temperature	+200 °C
Number of Elements per Chip	1
Length	15.75mm
Typical Gate Charge @ Vgs	105 nC @ 20 V
Width	5.15mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.5V
Height	20.15mm