- RS Stock No.:
- 900-9857P
- Mfr. Part No.:
- CSD19536KTTT
- Brand:
- Texas Instruments
536 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$9.57
(exc. GST)
$10.53
(inc. GST)
Units | Per unit |
13 - 24 | $9.57 |
25 + | $9.38 |
- RS Stock No.:
- 900-9857P
- Mfr. Part No.:
- CSD19536KTTT
- Brand:
- Texas Instruments
Technical data sheets
Legislation and Compliance
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 272 A |
Maximum Drain Source Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Series | NexFET |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.8 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 375 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 118 nC @ 0 V |
Width | 9.65mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 4.83mm |
Forward Diode Voltage | 1.1V |