N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10E60W,S1VX(S
- RS Stock No.:
- 891-2872
- Mfr. Part No.:
- TK10E60W,S1VX(S
- Brand:
- Toshiba
Discontinued product
- RS Stock No.:
- 891-2872
- Mfr. Part No.:
- TK10E60W,S1VX(S
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.7 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 100 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Width | 4.45mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.16mm |
| Number of Elements per Chip | 1 |
| Height | 15.1mm |
| Series | TK |
| Forward Diode Voltage | 1.7V |