N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH

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Discontinued product

Technical data sheets

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12.8 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	110 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	36.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	8.8 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.22mm
Transistor Material	Si
Height	2.39mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C