FDMC89521L Dual N-Channel MOSFET, 8.2 A, 60 V PowerTrench, 8-Pin Power 33 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 8.2 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 27 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type Power 33
Mounting Type Surface Mount
Transistor Configuration Isolated
Pin Count 8
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 1.9 W
Number of Elements per Chip 2
Width 3mm
Typical Turn-Off Delay Time 18 ns
Typical Input Capacitance @ Vds 1228 pF @ 30 V
Typical Gate Charge @ Vgs 17 nC @ 10 V
Minimum Operating Temperature -55 °C
Typical Turn-On Delay Time 7.9 ns
Transistor Material Si
Dimensions 3 x 3 x 0.75mm
Length 3mm
Maximum Operating Temperature +150 °C
Series PowerTrench
Height 0.75mm
10765 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$ 2.138
(exc. GST)
$ 2.352
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$2.138
$10.69
25 - 95
$1.778
$8.89
100 - 245
$1.44
$7.20
250 - 495
$1.27
$6.35
500 +
$1.26
$6.30
*price indicative
Packaging Options:
Related Products
The MegaFET process, which uses feature sizes approaching ...
Description:
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
This HEXFET® Power MOSFET utilizes the latest processing ...
Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to ...
Power MOSFETs are made as low ON-resistance devices ...
Description:
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. 2.5V-drive typeNch Middle-power MOSFETFast Switching SpeedSmall ...
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...