P-Channel MOSFET, 150 mA, 60 V, 3-Pin SOT-323 Infineon BSS84PWH6327XTSA1

RS Stock No.:: 826-9945
Mfr. Part No.:: BSS84PWH6327XTSA1
Brand:: Infineon

P-Channel MOSFET, 150 mA, 60 V, 3-Pin SOT-323 Infineon BSS84PWH6327XTSA1

This image is representative of the product range

On back order for despatch 03/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 500)

$0.145

(exc. GST)

$0.159

(inc. GST)

Units	Per unit	Per Reel*
500 +	$0.145	$72.50
*price indicative

RS Stock No.:: 826-9945
Mfr. Part No.:: BSS84PWH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	150 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-323
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	25 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	300 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	2mm
Typical Gate Charge @ Vgs	1 nC @ 10 V
Width	1.25mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.8mm